Kwangduk Douglas Lee
59Patents
6h-index
113Co-inventors
71Inventor score
Filing activity: Jul 18, 2006 → Jun 6, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8560134B1 | System and method for electric load recognition from centrally monitored power signal and its application to home energy management | Emerging Cross-Sectional Technologies | 72 | Active |
| US8361906B2 | Ultra high selectivity ashable hard mask film | Electricity | 53 | Active |
| US8536065B2 | Ultra high selectivity doped amorphous carbon strippable hardmask development and integration | Electricity | 46 | Active |
| US8993454B2 | Ultra high selectivity doped amorphous carbon strippable hardmask development and integration | Electricity | 14 | Active |
| US10403535B2 | Method and apparatus of processing wafers with compressive or tensile stress at elevated temperatures in a plasma enhanced chemical vapor deposition system | Electricity | 7 | Active |
| US9299581B2 | Methods of dry stripping boron-carbon films | Electricity | 7 | Active |
| US9711360B2 | Methods to improve in-film particle performance of amorphous boron-carbon hardmask process in PECVD system | Electricity | 5 | Active |
| US9390910B2 | Gas flow profile modulated control of overlay in plasma CVD films | Electricity | 5 | Active |
| US10580623B2 | Plasma processing using multiple radio frequency power feeds for improved uniformity | Electricity | 3 | Active |
| US10100408B2 | Edge hump reduction faceplate by plasma modulation | Electricity | 3 | Active |
| US10418243B2 | Ultra-high modulus and etch selectivity boron-carbon hardmask films | Electricity | 3 | Active |
| US8105465B2 | Method for depositing conformal amorphous carbon film by plasma-enhanced chemical vapor deposition (PECVD) | Electricity | 3 | Active |
| US10727059B2 | Highly etch selective amorphous carbon film | Electricity | 3 | Active |
| US7776516B2 | Graded ARC for high NA and immersion lithography | Electricity | 3 | Active |
| US10879041B2 | Method and apparatus of achieving high input impedance without using ferrite materials for RF filter applications in plasma chambers | Electricity | 2 | Active |
| US10504727B2 | Thick tungsten hardmask films deposition on high compressive/tensile bow wafers | Electricity | 2 | Active |
| US10236225B2 | Method for PECVD overlay improvement | Electricity | 2 | Active |
| US10373822B2 | Gas flow profile modulated control of overlay in plasma CVD films | Electricity | 2 | Active |
| US11469107B2 | Highly etch selective amorphous carbon film | Electricity | 2 | Active |
| US9947599B2 | Method for PECVD overlay improvement | Electricity | 2 | Active |
| US11728168B2 | Ultra-high modulus and etch selectivity boron-carbon hardmask films | Electricity | 1 | Active |
| US11584994B2 | Pedestal for substrate processing chambers | Electricity | 1 | Active |
| US9837265B2 | Gas flow profile modulated control of overlay in plasma CVD films | Electricity | 1 | Active |
| US8513129B2 | Planarizing etch hardmask to increase pattern density and aspect ratio | Electricity | 1 | Active |
| US10679830B2 | Cleaning process for removing boron-carbon residuals in processing chamber at high temperature | Electricity | 1 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.