Semiconductor manufacturing method and plasma processing apparatus
US10504741B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 23, 2018 |
| Grant date | Dec 10, 2019 |
| Priority date | — |
| Expiry date | Feb 23, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02076
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor manufacturing method includes a first process of etching an insulating film over a conductive layer of an object into a pattern of a mask, and exposing the conductive layer to a recessed portion formed in the insulating film, and a second process of forming an organic film in the recessed portion of the insulating film to which the conductive layer is exposed, the second process including, maintaining a chamber at a predetermined pressure, cooling a stage to −20° C. or less, and placing the object on the stage, supplying a gas including a gas containing a low vapor pressure material to the chamber, and generating plasma from the gas including the gas containing the low vapor pressure material, and causing precursors generated from the low vapor pressure material and included in the plasma to be deposited in the recessed portion such that the organic film is formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.