Method of atomic layer etching using hydrogen plasma
US10504742B2 · kind B2 · utility
8Cited by
1,239References
19Claims
0Family size
Assignee
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Key dates
| Filing date | May 23, 2018 |
| Grant date | Dec 10, 2019 |
| Priority date | — |
| Expiry date | May 23, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32136
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for etching a target layer on a substrate by a dry etching process includes at least one etching cycle, wherein an etching cycle includes: depositing a carbon halide film using reactive species on the target layer on the substrate; and etching the carbon halide film using a plasma of a non-halogen hydrogen-containing etching gas, which plasma alone does not substantially etch the target layer, thereby generating a hydrogen halide as etchant species at a boundary region of the carbon halide film and the target layer, thereby etching a portion of the target layer in the boundary region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.