Patent · US Active

Redistribution metal and under bump metal interconnect structures and method

US10504862B2 · kind B2 · utility

0Cited by
5References
20Claims
0Family size

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Key dates

Filing dateOct 25, 2017
Grant dateDec 10, 2019
Priority date
Expiry dateOct 25, 2037

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/14
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

An integrated circuit die includes a metal layer, a first passivation layer disposed above the metal layer, an aluminum containing redistribution layer disposed above the first passivation layer, an under bump metallization layer, and a redistribution layer plug. The redistribution layer plug is coupled to the metal layer and disposed in a via in the first passivation layer. The under bump metallization layer is coupled to the aluminum containing redistribution layer above the first passivation layer at a distance from the redistribution layer plug.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.