Semiconductor device having asymmetric work function metal layer
US10505007B1 · kind B1 · utility
1Cited by
1References
14Claims
0Family size
Assignee
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Key dates
| Filing date | Sep 17, 2018 |
| Grant date | Dec 10, 2019 |
| Priority date | — |
| Expiry date | Sep 17, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/201
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a metal gate on a substrate, in which the metal gate includes a first work function metal (WFM) layer and the first WFM layer further includes a first vertical portion, a second vertical portion, wherein the first vertical portion and the second vertical portion comprise different heights, and a first horizontal portion connecting the first vertical portion and the second vertical portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.