Inventor · Tainan, TW

Shui-Yen Lu

37Patents
4h-index
65Co-inventors
62Inventor score

Filing activity: May 29, 2008 → Jun 13, 2024

Most-cited inventions

PatentTitleAreaCited byStatus
US8980701B1 Method of forming semiconductor device Electricity 16 Active
US9716165B1 Field-effect transistor and method of making the same Electricity 9 Active
US8574990B2 Method of manufacturing semiconductor device having metal gate Electricity 7 Active
US8026571B2 Semiconductor-device isolation structure Electricity 4 Active
US9443741B1 Etching method for reducing microloading effect Electricity 3 Active
US8592321B2 Method for fabricating an aperture Electricity 3 Active
US9899491B2 Semiconductor device and method of forming the same Electricity 3 Active
US8709930B2 Semiconductor process Electricity 2 Active
US9502259B2 Semiconductor device and method for fabricating the same Electricity 2 Active
US9627538B2 Fin field effect transistor and method of manufacturing the same Electricity 1 Active
US10505007B1 Semiconductor device having asymmetric work function metal layer Electricity 1 Active
US8835243B2 Semiconductor process Electricity 1 Active
US9373718B2 Etching method for forming grooves in Si-substrate and fin field-effect transistor Electricity 1 Active
US9755057B1 Method of fabricating a semiconductor device Electricity 1 Active
US8252650B1 Method for fabricating CMOS transistor Electricity 1 Active
US9165997B2 Semiconductor process Electricity 1 Active
US9245972B2 Method for manufacturing semiconductor device Electricity 0 Active
US9443952B2 Method of forming semiconductor device Electricity 0 Active
US9761697B2 Semiconductor device and method for fabricating the same Electricity 0 Active
US9685541B2 Method for forming semiconductor structure Electricity 0 Active
US10043882B2 Method of forming semiconductor device Electricity 0 Active
US9627541B2 Non-planar transistor and method of forming the same Electricity 0 Active
US12040392B2 High electron mobility transistor and method for fabricating the same Electricity 0 Active
US9305847B2 Method of manufacturing semiconductor device having gate metal Electricity 0 Active
US9461147B2 Semiconductor structure Electricity 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.