P-channel DEMOS device
US10505037B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 8, 2018 |
| Grant date | Dec 10, 2019 |
| Priority date | — |
| Expiry date | Mar 8, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/516
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A p-channel drain extended metal oxide semiconductor (DEPMOS) device includes a doped surface layer at least one nwell finger defining an nwell length and width direction within the doped surface layer. A first pwell is on one side of the nwell finger including a p+ source and a second pwell is on an opposite side of the nwell finger including a p+ drain. A gate stack defines a channel region of the nwell finger between the source and drain. A field dielectric layer is on a portion of the doped surface layer defining active area boundaries including a first active area having a first active area boundary including a first active area boundary along the width direction (WD boundary). The nwell finger includes a reduced doping finger edge region over a portion of the WD boundary.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.