Patent · US Active

EUV source generation method and related system

US10506698B2 · kind B2 · utility

0Cited by

10References

20Claims

0Family size

Assignee

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. · TW

Inventors

Chun-Lin Chang · Dashulong, TW
Tzung-Chi Fu · Miaoli City, TW
Bo-Tsun Liu · Taipei, TW
Li-Jui Chen · Hsinchu, TW
Po-Chung Cheng · Zhongpu, TW
Wei YI · Taichung, TW
Shang-Chieh Chien · Tsuen Wan, CN

Key dates

Filing date	Apr 10, 2018
Grant date	Dec 10, 2019
Priority date	—
Expiry date	Apr 10, 2038

Classification

Technology area (CPC H)Electricity
CPC primaryH05G2/0084
WIPO fieldMedical technology
WIPO sectorInstruments

Abstract

A method and extreme ultraviolet (EUV) light source including a laser source configured to generate a first pre-pulse laser beam, a second pre-pulse laser beam, and a main pulse laser beam. In some embodiments, a droplet is irradiated within an extreme ultraviolet (EUV) vessel using the first pre-pulse laser beam to form a re-shaped droplet. In some examples, the droplet includes a tin droplet. In various embodiments, a seed plasma is then formed by irradiating the re-shaped droplet using the second pre-pulse laser beam. Thereafter, and in some cases, the seed plasma is heated by irradiating the seed plasma using the main pulse laser beam to generate EUV light.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.