Method of fabrication of a semiconductor element comprising a highly resistive substrate
US10510531B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 3, 2017 |
| Grant date | Dec 17, 2019 |
| Priority date | — |
| Expiry date | Nov 3, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76254
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of fabrication of a semiconductor element includes a step of rapid heat treatment in which a substrate comprising a base having a resistivity greater than 1000 Ohm·cm is exposed to a peak temperature sufficient to deteriorate the resistivity of the base. The step of rapid heat treatment is followed by a curing heat treatment in which the substrate is exposed to a curing temperature between 800° C. and 1250° C. and then cooled at a cooldown rate less than 5° C./second when the curing temperature is between 1250° C. and 1150° C., less than 20° C./second when the curing temperature is between 1150° C. and 1100° C., and less than 50° C./second when the curing temperature is between 1100° C. and 800° C.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.