Isabelle Bertrand
7Patents
1h-index
20Co-inventors
43Inventor score
Filing activity: Dec 2, 2013 → Nov 25, 2020
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US10297464B2 | Process for the manufacture of a semiconductor element comprising a layer for trapping charges | Electricity | 1 | Active |
| US12424995B2 | Method for manufacturing a structure comprising a thin layer transferred onto a support provided with a charge trapping layer | Electricity | 0 | Active |
| US11373856B2 | Support for a semiconductor structure | Electricity | 0 | Active |
| US10510531B2 | Method of fabrication of a semiconductor element comprising a highly resistive substrate | Electricity | 0 | Active |
| US9653536B2 | Method for fabricating a structure | Electricity | 0 | Active |
| US12362226B2 | Method for forming a handling substrate for a composite structure intended for RF applications and handling substrate | Electricity | 0 | Active |
| US12119258B2 | Semiconductor structure comprising a buried porous layer for RF applications | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.