Optoelectronic device comprising three-dimensional semiconductor elements, and method for manufacturing said device
US10510535B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Jul 13, 2016 |
| Grant date | Dec 17, 2019 |
| Priority date | — |
| Expiry date | Jul 13, 2036 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention relates to a method for manufacturing an optoelectronic device (50) including wire-like, conical, or frustoconical semiconductor elements (20) predominantly comprising a III-V compound. Each semiconductor element extends along an axis and includes a portion (54), the side surfaces (55) of which are covered with a shell (56) including at least one active region (31), wherein the portions are created by continuous growth in a reactor, and wherein the temperature in the reactor varies in an uninterrupted manner from a first temperature value that favors growth of first crystallographic planes perpendicular to said axis, to a second temperature value that is strictly lower than the first temperature value and favors growth of second crystallographic planes parallel to said axis.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.