Method of depositing a co-doped polysilicon film on a surface of a substrate within a reaction chamber
US10510536B2 · kind B2 · utility
0Cited by
1,239References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 29, 2018 |
| Grant date | Dec 17, 2019 |
| Priority date | — |
| Expiry date | Mar 29, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/12
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods for depositing a co-doped polysilicon film on a surface of a substrate within a reaction chamber are provided. The method may include: heating the substrate to a deposition temperature of less than 550° C.; simultaneously contacting the substrate with a silicon precursor, a n-type dopant precursor, and a p-type dopant precursor; and depositing the co-doped polysilicon film on the surface of the substrate. Related semiconductor structures are also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.