Low resistivity films containing molybdenum

US10510590B2 · kind B2 · utility

Assignee

• Lam Research Corporation · US

Inventors

• Shruti Vivek Thombare · Sunnyvale, US
• Raashina Humayun · Los Altos, US
• Michal Danek · Cupertino, US
• Chiukin Steven Lai · Sunnyvale, US
• Joshua Collins · Sunnyvale, US
• Hanna Bamnolker · Cupertino, US
• Griffin John Kennedy · San Leandro, US
• Gorun Butail · Fremont, US
• Patrick A. Van Cleemput · San Jose, US

Key dates

• Filing date: Apr 9, 2018
• Grant date: Dec 17, 2019
• Expiry date: Apr 9, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B43/27
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Provided herein are low resistance metallization stack structures for logic and memory applications and related methods of fabrication. In some implementations, the methods involve providing a tungsten (W)-containing layer on a substrate; and depositing a molybdenum (Mo)-containing layer on the W-containing layer. In some implementations, the methods involve depositing a Mo-containing layer directly on a dielectric or titanium nitride (TiN) substrate without an intervening W-containing layer.