Vertically oriented metal silicide containing e-fuse device and methods of making same
US10510662B2 · kind B2 · utility
1Cited by
3References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 7, 2017 |
| Grant date | Dec 17, 2019 |
| Priority date | — |
| Expiry date | Nov 7, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31053
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
One illustrative method disclosed herein comprises forming a vertically oriented semiconductor (VOS) structure in a semiconductor substrate and performing a metal silicide formation process to convert at least a portion of the VOS structure into a metal silicide material, thereby forming a conductive silicide vertically oriented e-fuse.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.