Method for forming semiconductor device structure with conductive line
US10510671B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 31, 2018 |
| Grant date | Dec 17, 2019 |
| Priority date | — |
| Expiry date | Jan 31, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L24/20
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a semiconductor device structure is provided. The method includes forming a first mask layer over a dielectric layer. The first mask layer has a trench. The trench has an inner wall and a bottom surface. The method includes forming a second mask layer in the trench. The method includes removing the second mask layer covering the bottom surface to form a second trench in the second mask layer. The second trench exposes the bottom surface and is over a first portion of the dielectric layer. The remaining second mask layer covers the inner wall. The method includes removing the first portion, the first mask layer, and the second mask layer to form a third trench in the dielectric layer. The method includes forming a conductive structure in the third trench.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.