Magnetoresistive memory device
US10510950B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 5, 2019 |
| Grant date | Dec 17, 2019 |
| Priority date | — |
| Expiry date | Jul 5, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B61/22
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A magnetoresistive memory device includes a first magnetic layer having a variable magnetization direction, a second magnetic layer, a magnetization direction of the second magnetic layer being invariable, a first nonmagnetic layer provided between the first magnetic layer and the second magnetic layer, and a second nonmagnetic layer provided on the first magnetic layer, which is opposite the first nonmagnetic layer. The first magnetic layer has a stacked layer structure in which an amorphous magnetic material layer is sandwiched between crystalline magnetic material layers. The magnetoresistive memory device further includes nonmagnetic material layers provided between one of the crystalline magnetic material layers and the amorphous magnetic material layer, and between the other crystalline magnetic layer and the amorphous magnetic material layer, respectively.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.