Patent · US Active

Wafer based corrosion and time dependent chemical effects

US10515862B2 · kind B2 · utility

0Cited by
8References
6Claims
0Family size

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Key dates

Filing dateApr 5, 2017
Grant dateDec 24, 2019
Priority date
Expiry dateMay 16, 2037

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L22/14
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

Embodiments may also include a residual chemical reaction diagnostic device. The residual chemical reaction diagnostic device may include a substrate and a residual chemical reaction sensor formed on the substrate. In an embodiment, the residual chemical reaction sensor provides electrical outputs in response to the presence of residual chemical reactions. In an embodiment, the substrate is a device substrate, and the sensor is formed in a scribe line of the device substrate. In an alternative embodiment, the substrate is a process development substrate. In some embodiments, the residual chemical reaction sensor includes, a first probe pad, wherein a plurality of first arms extend out from the first probe pad, and a second probe pad, wherein a plurality of second arms extend out from the second probe pad and are interdigitated with the first arms.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.