Semiconductor structure and manufacturing method thereof
US10515867B2 · kind B2 · utility
4Cited by
5References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 24, 2018 |
| Grant date | Dec 24, 2019 |
| Priority date | — |
| Expiry date | Apr 9, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/19105
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present disclosure provides a semiconductor structure including a substrate, a first die over the substrate, a second die over the first die, a heat spreader having a sidewall facing toward and proximal to a sidewall of the first die, and a thermal interface material (TIM) between the sidewall of the first die and the sidewall of the heat spreader. A thermal conductivity of the heat spreader is higher than a thermal conductivity of the TIM.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.