Patent · US Active

Semiconductor device having a porous metal layer and an electronic device having the same

US10515910B2 · kind B2 · utility

0Cited by

2References

17Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Martin Mischitz · Wernberg, AT
Kurt Matoy · Strau, AT

Key dates

Filing date	Nov 7, 2014
Grant date	Dec 24, 2019
Priority date	—
Expiry date	Apr 12, 2036

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/351
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

According to various embodiments, a semiconductor device may include: a contact pad; a metal clip disposed over the contact pad; and a porous metal layer disposed between the metal clip and the contact pad, the porous metal layer connecting the metal clip and the contact pad with each other.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.