Method to induce strain in finFET channels from an adjacent region

US10515965B2 · kind B2 · utility

Assignee

• STMICROELECTRONICS, INC. · US

Inventors

• Pierre Morin · Albany, US
• Nicolas Loubet · Guilderland, US

Key dates

• Filing date: Jul 13, 2018
• Grant date: Dec 24, 2019
• Expiry date: Jul 13, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/8325

Abstract

Methods and structures for forming strained-channel finFETs are described. Fin structures for finFETs may be formed using two epitaxial layers of different lattice constants that are grown over a bulk substrate. A first thin, strained, epitaxial layer may be cut to form strain-relieved base structures for fins. The base structures may be constrained in a strained-relieved state. Fin structures may be epitaxially grown in a second layer over the base structures. The constrained base structures can cause higher amounts of strain to form in the epitaxially-grown fins than would occur for non-constrained base structures.