In-situ plasma cleaning of process chamber components
US10522330B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 7, 2015 |
| Grant date | Dec 31, 2019 |
| Priority date | — |
| Expiry date | Oct 17, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/335
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Provided herein are approaches for in-situ plasma cleaning of one or more components of an ion implantation system. In one approach, the component may include a beam-line component having one or more conductive beam optics. The system further includes a power supply for supplying a first voltage and first current to the component during a processing mode and a second voltage and second current to the component during a cleaning mode. The second voltage and current may be applied to the conductive beam optics of the component, in parallel, to selectively (e.g., individually) generate plasma around one or more of the one or more conductive beam optics. The system may further include a flow controller for adjusting an injection rate of an etchant gas supplied to the component, and a vacuum pump for adjusting pressure of an environment of the component.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.