Electrical device and a method for forming an electrical device

US10522485B2 · kind B2 · utility

Assignee

• Intel IP Corporation · US

Inventors

• Christian Geissler · Teugn, DE
• Sven Albers · Regensburg, DE
• Georg Seidemann · Landshut, DE
• Andreas Wolter · Regensburg, DE
• Klaus Reingruber · Langquaid, DE
• Thomas Wagner · Regelsbach, DE
• Marc Dittes · Regensburg, DE

Key dates

• Filing date: Dec 21, 2015
• Grant date: Dec 31, 2019
• Expiry date: Dec 21, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/01074
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

An electrical device includes a redistribution layer structure, an inter-diffusing material contact structure and a vertical electrically conductive structure located between the redistribution layer structure and the inter-diffusing material contact structure. The vertical electrically conductive structure includes a diffusion barrier structure located adjacently to the inter-diffusing material contact structure. Further, the diffusion barrier structure and the redistribution layer structure comprise different lateral dimensions.