Method of fabricating vertical transistor device

US10522552B2 · kind B2 · utility

Assignee

• IMEC VZW · BE

Inventors

• Julien Ryckaert · Schaerbeek - Schaarbeek, BE
• Naoto Horiguchi · Leuven, BE
• Dan M. Mocuta · Herent, BE
• Trong Huynh Bao · Leuven, BE

Key dates

• Filing date: May 15, 2018
• Grant date: Dec 31, 2019
• Expiry date: May 15, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/6728

Abstract

The disclosed technology generally relates semiconductor devices and more particularly to a vertical transistor device, and a method of fabricating the same. In one aspect, the method includes providing, on a substrate, a fin formed of a stack of a first layer, a second layer and a third layer, wherein the second layer is positioned above the first layer and the third layer is positioned above the second layer. The method additionally includes forming a dielectric on the sidewalls of the first and third layers of the fin selectively against a sidewall of the second layer, and the method additionally includes forming a gate contacting layer for contacting a sidewall of the second layer. The first and third layers define a source region and a drain region, respectively, of the vertical transistor device. The second layer defines a channel region of the vertical transistor device. The dielectric on the sidewalls of the first and third layers electrically isolates the source and drain regions from the gate contacting layer.