Semiconductor device
US10522627B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 5, 2018 |
| Grant date | Dec 31, 2019 |
| Priority date | — |
| Expiry date | Jul 5, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/516
Abstract
A semiconductor device may be provided with a semiconductor substrate, an upper electrode, a lower electrode and a gate electrode provided within a trench via a gate insulator film. The semiconductor substrate may include a p-type body layer being in contact with the upper electrode, an n-type drift layer intervening between the body layer and the lower electrode, a p-type floating region provided along a bottom surface of the trench, and a p-type connection region extending between the body layer and the floating region along a side surface of the trench. The trench may include a first section where the connection region is not provided and a second section where the connection region is provided. An inclination angle of the side surface of the trench in the second section may be greater than an inclination angle of the side surface of the trench in the first section.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.