Resistive memory and method of fabricating the same
US10522755B2 · kind B2 · utility
4Cited by
3References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 9, 2016 |
| Grant date | Dec 31, 2019 |
| Priority date | — |
| Expiry date | Feb 26, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/841
Abstract
Provided are a resistive memory and a method of fabricating the resistive memory. The resistive memory includes a first electrode, a second electrode, a variable resistance layer, an oxygen exchange layer, and a protection layer. The first electrode and the second electrode are arranged opposite to each other. The variable resistance layer is arranged between the first electrode and the second electrode. The oxygen exchange layer is arranged between the variable resistance layer and the second electrode. The protection layer is arranged at least on sidewalls of the oxygen exchange layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.