Dual resistive-material regions for phase change memory devices

US10522757B2 · kind B2 · utility

Assignee

• Micron Technology, Inc. · US

Inventors

• Yudong Kim · Cupertino, US
• Ilya V. Karpov · Portland, US
• Charles C. Kuo · Hillsboro, US
• Maria Santina Marangon · Cernusco sul Naviglio, IT
• Tyler Lowrey · San Jose, US
• Greg Atwood · Los Gatos, US

Key dates

• Filing date: Dec 21, 2017
• Grant date: Dec 31, 2019
• Expiry date: Jan 18, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N70/882

Abstract

In various examples, dual resistive-material regions for a phase change material region are fabricated by initially forming a resistive material. Prior to forming the phase change material region over the resistive material, at least an upper portion of the resistive material is exposed to an implantation or plasma that increases the resistance of an upper portion of the resistive material relative to the remainder, or bulk, of the resistive material. As a result, in certain embodiments, the portion of the resistive material proximate to the phase change material region may be used as a heater because of a relatively, high resistance value of the resistive material, but the bulk of the resistive material has a relatively lower resistance value and, thus, does not increase the voltage drop and current usage of the device. Other methods and devices are disclosed.