Method for forming doped metal oxide films on a substrate by cyclical deposition and related semiconductor device structures
US10529563B2 · kind B2 · utility
2Cited by
1,239References
15Claims
0Family size
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Key dates
| Filing date | Mar 9, 2018 |
| Grant date | Jan 7, 2020 |
| Priority date | — |
| Expiry date | Mar 9, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02592
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods for forming a doped metal oxide film on a substrate by cyclical deposition are provided. In some embodiments, methods may include contacting the substrate with a first reactant comprising a metal halide source, contacting the substrate with a second reactant comprising a hydrogenated source and contacting the substrate with a third reactant comprising an oxide source. In some embodiments, related semiconductor device structures may include a doped metal oxide film formed by cyclical deposition processes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.