Patent · US Active

Switch device and storage unit

US10529777B2 · kind B2 · utility

2Cited by

0References

17Claims

0Family size

Assignee

SONY SEMICONDUCTOR SOLUTIONS CORPORATION · JP

Inventors

Hiroaki Sei · Yokohama, JP
Kazuhiro Ohba · Rifu, JP

Key dates

Filing date	Mar 16, 2016
Grant date	Jan 7, 2020
Priority date	—
Expiry date	Mar 16, 2036

Classification

Technology area (CPC G)Physics
CPC primaryG11C2213/76
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

A switch device according to an embodiment of the technology includes a first electrode, a second electrode that faces the first electrode, and a switch layer provided between the first electrode and the second electrode. The switch layer includes a chalcogen element. The switch device further includes a diffusion suppressing layer that is in contact with at least a portion of a surface of the switch layer, and suppresses diffusion of oxygen into the switch layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.