Semiconductor device and method for fabricating the same
US10529920B1 · kind B1 · utility
10Cited by
2References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 7, 2018 |
| Grant date | Jan 7, 2020 |
| Priority date | — |
| Expiry date | Aug 7, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/061
Abstract
A method for fabricating semiconductor device includes the steps of: forming a first inter-metal dielectric (IMD) layer on a substrate; forming a magnetic tunneling junction (MTJ) on the first IMD layer; forming a liner on the MTJ and the first IMD layer; removing part of the liner to form a spacer adjacent to the MTJ; and forming a second IMD layer on the first IMD layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.