Method for depositing a semiconductor structure on a surface of a substrate and related semiconductor structures
US10535516B2 · kind B2 · utility
0Cited by
1,240References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 1, 2018 |
| Grant date | Jan 14, 2020 |
| Priority date | — |
| Expiry date | Feb 1, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/822
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for depositing a semiconductor structure on a surface of a substrate is disclosed. The method may include: depositing a first group IVA semiconductor layer over a surface of the substrate; contacting an exposed surface of the first group IVA semiconductor layer with a first gas comprising a first chloride gas; and depositing a second group IVA semiconductor layer over a surface of the first group IVA semiconductor layer. Related semiconductor structures are also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.