Patent · US Active

Devices with backside metal structures and methods of formation thereof

US10535553B2 · kind B2 · utility

0Cited by

0References

14Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Oliver Hellmund · Straubing, DE
Ingo Muri · Villach, AT
Johannes Baumgartl · Arnoldstein, AT
Iris Moder · Villach, AT
Thomas Neidhart · Klagenfurt, AT
Hans-Joachim Schulze · Taufkirchen, DE

Key dates

Filing date	Apr 12, 2018
Grant date	Jan 14, 2020
Priority date	—
Expiry date	Apr 12, 2038

Classification

Technology area (CPC H)Electricity
CPC primaryH10D62/8503
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A semiconductor device includes a trench extending through a semiconductor substrate and an epitaxial layer disposed over a first side of the semiconductor substrate. The epitaxial layer partially fills a portion of the trench. The semiconductor device further includes a back side metal layer disposed over a second side of the semiconductor substrate. The back side metal layer extends into the trench and fills the remaining portion of the trench. The epitaxial layer partially filling the trench contacts the back side metal layer filling the remaining portion within the trench.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.