Electrostatic discharge devices with reduced capacitance

US10541236B2 · kind B2 · utility

Assignee

• GlobalFoundries Inc. · KY

Inventors

• Souvick Mitra · South Burlington, US
• Mickey H. Yu · South Burlington, US
• Alain Loiseau · Williston, US
• You Li · South Burlington, US
• Robert J. Gauthier, Jr. · South Burlington, US
• Tsung-Che Tsai · Hsinchu, TW

Key dates

• Filing date: Jun 26, 2018
• Grant date: Jan 21, 2020
• Expiry date: Jun 26, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/62
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

The present disclosure relates to semiconductor structures and, more particularly, to electrostatic discharge structures with reduced capacitance and methods of manufacture. The structure includes: a plurality of fin structures provided in at least one N+ type region and at least one P+ region; and a plurality of gate structures disposed over the plurality of fin structures and within the at least one N+ type region and one P+ region, the plurality of gate structures being separated in a lengthwise direction between the at least one N+ type region and the least one P+ region.