Method for depositing a group IV semiconductor and related semiconductor device structures
US10541333B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 21, 2018 |
| Grant date | Jan 21, 2020 |
| Priority date | — |
| Expiry date | May 21, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/62
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for depositing a Group IV semiconductor on a surface of a substrate is disclosed. The method may include: providing a substrate within a reaction chamber and heating the substrate to a deposition temperature. The methods may further include: exposing the substrate to at least one Group IV precursor and exposing the substrate to at least one Group IIIA dopant precursor; wherein the at least one Group IIIA dopant precursor comprises a borohydride, an organic borohydride, a halide, or an organohalide. Semiconductor device structures including a Group IV semiconductor deposited by the methods of the disclosure are also provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.