Patent · US Active

Integrated semiconductor device and manufacturing method

US10544037B2 · kind B2 · utility

0Cited by

4References

19Claims

0Family size

Assignee

Infineon Technologies Dresden GmbH & Co. KG · DE

Inventors

Thoralf Kautzsch · Dresden, DE
Heiko Froehlich · Radebeul, DE
Alessia Scire · Dresden, DE
Maik Stegemann · Freital, DE
Bernhard Winkler · Birkenfeld, DE
Andre Roeth · Dresden, DE
Steffen Bieselt · Wehlen, DE
Mirko Vogt · Dresden, DE

Key dates

Filing date	Jan 19, 2018
Grant date	Jan 28, 2020
Priority date	—
Expiry date	Apr 23, 2038

Classification

Technology area (CPC B)Performing Operations; Transporting
CPC primaryB81B2203/0163
WIPO fieldMicro-structural and nano-technology
WIPO sectorChemistry

Abstract

The present disclosure relates to an integrated semiconductor device, comprising a semiconductor substrate; a cavity formed into the semiconductor substrate; a sensor portion of the semiconductor substrate deflectably suspended in the cavity at one side of the cavity via a suspension portion of the semiconductor substrate interconnecting the semiconductor substrate and the sensor portion thereof, wherein an extension of the suspension portion along the side of the cavity is smaller than an extension of said side of the cavity.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.