Patent · US Active

Projection optical unit for EUV projection lithography

US10545323B2 · kind B2 · utility

11Cited by
1References
21Claims
0Family size

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Key dates

Filing dateDec 17, 2018
Grant dateJan 28, 2020
Priority date
Expiry dateDec 17, 2038

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG03F7/70958
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

A projection optical unit for EUV projection lithography has a plurality of mirrors for imaging an object field into an image field with illumination light. At least one of the mirrors is an NI mirror and at least one of the mirrors is a GI mirror. A mirror dimension Dx of the at least one NI mirror in a plane of extent (xz) perpendicular to a plane of incidence (yz) satisfies the following relationship: 4 LLWx/IWPVmax<Dx. A mirror dimension Dy of the at least one GI mirror in the plane of incidence (yz) satisfies the following relationship: 4 LLWy/(IWPVmax cos(a))<Dy.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.