Face-on, gas-assisted etching for plan-view lamellae preparation
US10546719B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 23, 2018 |
| Grant date | Jan 28, 2020 |
| Priority date | — |
| Expiry date | May 23, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32136
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
Method for preparing site-specific, plan-view lamellae from multilayered microelectronic devices. A focused ion beam that is directed, with an etch-assisting gas, toward an uppermost layer of a device removes at least that uppermost layer and thereby exposes an underlying layer over, or comprising, a target area from which the site-specific, plan-view lamella is to be prepared, wherein the focused ion beam is in a face-on orientation in removing the uppermost layer to expose the underlying layer. In a preferred embodiment, the etch-assisting gas comprises methyl nitroacetate. In alternative embodiments, the etch-assisting gas is methyl acetate, ethyl acetate, ethyl nitroacetate, propyl acetate, propyl nitroacetate, nitro ethyl acetate, methyl methoxyacetate, or methoxy acetylchloride.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.