Forming low resistivity fluorine free tungsten film without nucleation
US10546751B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 20, 2018 |
| Grant date | Jan 28, 2020 |
| Priority date | — |
| Expiry date | Apr 20, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/00
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Methods of depositing fluorine-free tungsten by sequential CVD pulses, such as by alternately pulsing a fluorine-free tungsten precursor and hydrogen in cycles of temporally separated pulses, are provided. Some methods involve depositing fluorine-free tungsten by sequential CVD without depositing a tungsten nucleation layer. Methods also include depositing tungsten directly on a substrate surface using alternating pulses of a chlorine-containing tungsten precursor and hydrogen without treating the substrate surface. Methods also include depositing a tungsten layer using a reducing agent and fluorine-free tungsten-containing precursor and depositing bulk tungsten in sequential CVD cycles of alternating pulses of hydrogen and a tungsten-containing precursor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.