Xiaolan Ba
11Patents
4h-index
24Co-inventors
52Inventor score
Filing activity: Feb 13, 2014 → Aug 10, 2020
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US9613818B2 | Deposition of low fluorine tungsten by sequential CVD process | Electricity | 24 | Active |
| US9978605B2 | Method of forming low resistivity fluorine free tungsten film without nucleation | Electricity | 19 | Active |
| US9754824B2 | Tungsten films having low fluorine content | Electricity | 13 | Active |
| US10546751B2 | Forming low resistivity fluorine free tungsten film without nucleation | Electricity | 7 | Active |
| US9580801B2 | Enhancing electrical property and UV compatibility of ultrathin blok barrier film | Electricity | 3 | Active |
| US9633861B2 | Cu/barrier interface enhancement | Electricity | 2 | Active |
| US12014928B2 | Multi-layer feature fill | Electricity | 1 | Active |
| US11972952B2 | Atomic layer deposition on 3D NAND structures | Electricity | 1 | Active |
| US12077858B2 | Tungsten deposition | Electricity | 0 | Active |
| US12237221B2 | Nucleation-free tungsten deposition | Electricity | 0 | Active |
| US12060639B2 | Rapid flush purging during atomic layer deposition | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.