Method for generating vertical profiles in organic layer etches
US10546756B2 · kind B2 · utility
1Cited by
11References
19Claims
0Family size
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Key dates
| Filing date | Nov 7, 2017 |
| Grant date | Jan 28, 2020 |
| Priority date | — |
| Expiry date | Nov 7, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0337
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for etching an organic carbon based layer below a silicon containing hardmask is provided. An etch gas is provided comprising oxygen and a halogen containing component, and a passivation component, wherein a ratio by volume of total flow rate of the etch gas to flow rate of the halogen containing component is between 10,000:1 to 10:1. The etch gas is formed into a plasma, wherein the organic carbon based layer and the silicon contain hardmask are exposed to the plasma and wherein the plasma selectively etches the organic carbon based layer with respect to the silicon containing hardmask.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.