Forming thermally stable salicide for salicide first contacts
US10546941B2 · kind B2 · utility
3Cited by
8References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 8, 2017 |
| Grant date | Jan 28, 2020 |
| Priority date | — |
| Expiry date | Nov 8, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0149
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a salicide includes epitaxially growing source/drain (S/D) regions on a semiconductor fin wherein the S/D regions include (111) facets in a diamond shape and the S/D regions on adjacent fins have separated diamond shapes. A metal is deposited on the (111) facets. A thermally stabilizing anneal process is performed to anneal the metal on the S/D regions to form a silicide on the (111) facets. A dielectric layer is formed over the S/D regions. The dielectric layer is opened up to expose the silicide and to form contact holes. Contacts to the silicide are formed in the contact holes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.