Electronic device including an insulated gate bipolar transistor having a field-stop region and a process of forming the same
US10546948B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 11, 2018 |
| Grant date | Jan 28, 2020 |
| Priority date | — |
| Expiry date | Sep 11, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/393
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An electronic device can include a semiconductor substrate having a front side and a back side; an emitter region closer to the front side than to the back side; a trench extending from a back side surface into the semiconductor substrate, wherein the trench has a sidewall and a bottom; a collector region along the back side surface and spaced apart from the bottom of the trench; a field-stop region lying along the bottom and at least a portion of the sidewall of the trench, wherein the emitter and field-stop regions have one conductivity type, and the collector region has the opposite conductivity type; and a collector terminal along the back side and including a metal-containing material, wherein the collector terminal contacts the collector region and is isolated from the field-stop region. A process of forming the electronic device does not require complex or marginal processing operations.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.