Scan and corrector magnet designs for high throughput scanned beam ion implanter
US10553392B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 13, 2018 |
| Grant date | Feb 4, 2020 |
| Priority date | — |
| Expiry date | Dec 13, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/31708
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An ion implantation system and method provide a non-uniform flux of a ribbon ion beam. A spot ion beam is formed and provided to a scanner, and a scan waveform having a time-varying potential is applied to the scanner. The ion beam is scanned by the scanner across a scan path, generally defining a scanned ion beam comprised of a plurality of beamlets. The scanned beam is then passed through a corrector apparatus. The corrector apparatus is configured to direct the scanned ion beam toward a workpiece at a generally constant angle of incidence across the workpiece. The corrector apparatus further comprises a plurality of magnetic poles configured to provide a non-uniform flux profile of the scanned ion beam at the workpiece.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.