Techniques for processing a polycrystalline layer using an angled ion beam
US10553448B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 31, 2016 |
| Grant date | Feb 4, 2020 |
| Priority date | — |
| Expiry date | Oct 13, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32115
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method of processing a layer. The method may include providing the layer on a substrate, the substrate defining a substrate plane; directing an ion beam to an exposed surface of the layer in an ion exposure when the substrate is disposed in a first rotational position, the ion beam having a first ion trajectory, the first ion trajectory extending along a first direction, wherein the first ion trajectory forms a non-zero angle of incidence with respect to a perpendicular to the substrate plane; performing a rotation by rotating the substrate with respect to the ion beam about the perpendicular from the first rotational position to a second rotational position; and directing the ion beam to the exposed surface of the layer in an additional ion exposure along the first ion trajectory when the substrate is disposed in the second rotational position.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.