IC structure with interface liner and methods of forming same
US10553478B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 30, 2018 |
| Grant date | Feb 4, 2020 |
| Priority date | — |
| Expiry date | Jul 30, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/84
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Embodiments of the present disclosure may provide a method of forming an integrated circuit (IC) structure, the method including: forming a doped metal layer within a contact opening in an inter-level dielectric (ILD) material on a conductive region, such that the doped metal layer overlies the conductive region, the doped metal layer including a first metal doped with a second metal; and forming a contact to the conductive region within the contact opening of the ILD material by annealing the doped metal layer such that the second metal diffuses into the ILD material to form an interface liner directly between the annealed doped metal layer and the ILD material, the interface liner formed only on sidewalls of the contact opening and in direct contact with the ILD material and only at an interface of the doped metal layer and the ILD material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.