Method for fabricating contact electrical fuse
US10553534B2 · kind B2 · utility
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3References
8Claims
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Assignee
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Key dates
| Filing date | Apr 10, 2018 |
| Grant date | Feb 4, 2020 |
| Priority date | — |
| Expiry date | Apr 10, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for fabricating semiconductor device includes the steps of first forming a first dielectric layer on a substrate, in which a first conductor is embedded within the first dielectric layer. Next, a second dielectric layer is formed on the first dielectric layer, part of the second dielectric layer is removed to form a contact hole, and a lateral etching process is conducted to expand the contact hole to form a funnel-shaped opening. Next, a metal layer is formed in the funnel-shaped opening, and the metal layer is planarized to form a second conductor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.