Regrowth method for fabricating wide-bandgap transistors, and devices made thereby
US10553697B1 · kind B1 · utility
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16Claims
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Key dates
| Filing date | Apr 16, 2019 |
| Grant date | Feb 4, 2020 |
| Priority date | — |
| Expiry date | Apr 16, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/411
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods are provided for fabricating a HEMT (high-electron-mobility transistor) that involve sequential epitaxial growth of III-nitride channel and barrier layers, followed by epitaxial regrowth of further III-nitride material through a window in a mask layer. The regrowth takes place on the barrier layer, only in the access region or regions. Devices made according to the disclosed methods are also provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.