Post chemical mechanical polishing formulations and method of use

US10557107B2 · kind B2 · utility

Assignee

• ENTEGRIS, INC. · US

Inventors

• Laisheng Sun · Gilbert, US
• Peng Zhang · Montvale, US
• Jun Liu · South San Francisco, US
• Steven Medd · Danbury, US
• Jeffrey A. Barnes · New Milford, US
• Shrane-Ning Jenq · Hengshan, TW

Key dates

• Filing date: May 4, 2018
• Grant date: Feb 11, 2020
• Expiry date: Aug 9, 2038

Classification

• Technology area (CPC C): Chemistry; Metallurgy
• CPC primary: C11D2111/22
• WIPO field: Basic materials chemistry
• WIPO sector: Chemistry

Abstract

A cleaning composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The cleaning compositions are substantially devoid of alkali hydroxides, alkaline earth metal hydroxides, and tetramethylammonium hydroxide. The composition achieves highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device without compromising the low-k dielectric material or the copper interconnect material.