Patent · US Active

Dual-depth STI cavity extension and method of production thereof

US10559490B1 · kind B1 · utility

1Cited by

3References

15Claims

0Family size

Assignee

GlobalFoundries Inc. · KY

Inventors

Elliot John Smith · Dresden, DE
Nigel Chan · Sunnyvale, US
Ming-Cheng Chang · Daxi District, TW

Key dates

Filing date	Aug 21, 2018
Grant date	Feb 11, 2020
Priority date	—
Expiry date	Aug 21, 2038

Classification

Technology area (CPC H)Electricity
CPC primaryH10D62/116
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A device including multiple depth STI regions with sidewall profiles, and method of production thereof Embodiments include a top region having a substantially vertical sidewall profile; and a bottom region having a width greater than or equal to the top region and a sidewall profile.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.