Seamless tungsten fill by tungsten oxidation-reduction
US10559497B2 · kind B2 · utility
2Cited by
2References
15Claims
0Family size
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Key dates
| Filing date | Jun 12, 2018 |
| Grant date | Feb 11, 2020 |
| Priority date | — |
| Expiry date | Jun 12, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/53257
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods for filling a substrate feature with a seamless tungsten fill are described. The methods include depositing a tungsten film, oxidizing the tungsten film to a tungsten oxide pillar, reducing the tungsten oxide film to a seamless tungsten gapfill and optionally depositing additional tungsten on the tungsten gapfill.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.