Deposition of cobalt films with high deposition rate
US10559578B2 · kind B2 · utility
0Cited by
3References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 1, 2018 |
| Grant date | Feb 11, 2020 |
| Priority date | — |
| Expiry date | Jun 1, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76877
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Embodiments of the invention provide methods of processing a substrate having a stack of spaced oxide layers with gaps between the oxide layers. A metallic nucleation layer is formed in the gaps and a cobalt film is deposited on the nucleation layer to form wordlines.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.